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Si4812BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P DM
t 1
0.02
t 2
1. Duty Cycle, D =
t 1
t 2
2. Per Unit Base = R thJA = 72 °C/W
0.01
Single Pulse
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2
1
Duty Cycle = 0.5
0.2
Notes:
t 1
0.1
0.01
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73038 .
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
www.vishay.com
5
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